|Opamp Technical Books
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|Advances in Amorphous Semiconductors|
|Introduction Structure Theory Of Effective Mass Optical Properties Photoluminescence Charge Carrier-Phonon Interaction Defects Electronic Transport Photoconductivity Reversible Photoinduced Effects Applications Index|
|CRC - TAYLOR & FRANCIS||H||ISBN: 0415287707||PGS: 336||List: 157.95 YOUR PRICE: 150.05|
|Compounts Semiconductors: Growth, Processing and Devices|
|Introduction. Mass-Producing Technologies for Semi-Insulating GaAs Substrates. Photo-Mombe: A New Epitaxial Growth Technique. Photoassociated Single Molecular Layer Growth. Atomic Layer Epitaxy of III-V Compounds. Passivation of III-V Compound Semiconductors. Understanding and Control of Insulator-Semiconductor Interfaces for Surface Passivation of III-V Compound Semiconductors. Surface-Emitting GaInAsP/InP Diode Lasers Fabricated by Mass Transport. Growth, Characterization, and Device Applications of GaAs on Si. Recent Progress in Quantum Well Lasers in Japan. Quantum Well Heterostructure Lasers. Overview of a Vertical Cavity Surface Emitting Laser. Emphasis on:|
|CRC - TAYLOR & FRANCIS||H||ISBN: 0849301653||PGS: 160||List: 229.95 YOUR PRICE: 218.45|
|Group IV Heterostructures, Physics and Devices (Si, Ge, C, &agr;-Sn)|
|These proceedings contain the majority of papers presented at|
Symposium D, "Group IV heterostructures, physics and devices
(Si,Ge,C,&agr;-Sn)", of the Spring Meeting of the European
Materials Research Society, held at the Congress Centre,
Strasbourg, France, 4-7 June 1996. This Symposium was attended
by about 150 scientists from throughout the world, among whom 18
were invited speakers.
The aim of the Symposium was to discuss
|Elsevier Science||H||ISBN: 0444205020||PGS: N/A||List: 269.00 YOUR PRICE: 255.55|
|Guidebook for Managing Silicon Chip Reliability|
|Introduction; How Devices Fail; Intrinsic Mechanisms; Extrinsic Mechanisms; Intrinsic Device Sensitivities; Device Transconductance Sensitivities; Leakage Current Sensitivities; Breakdown Issues; Electromigration; Description of the Mechanism; Modeling of the Mechanism; How to Detect/Test; How to Manage; Hot Carrier Aging; Description of the Mechanism; Modeling of the Mechanism; Detection of Hot Carrier Aging; Avoidance of Hot Carrier Aging; Time Dependent Dielectric Breakdown; Description of the Mechanism; Modeling of the Mechanism; How to Detect/Test; How to Avoid and Manage; Mechanical Stress Induced Migration; Description of the Mechanism; Modeling of the Mechanism; How to Detect/Test; How to Manage; Alpha Particle Sensitivity; Description of the Mechanism; Modeling of the Mechanism; Prevention of Alpha Particle Induced Damage; Electrostatic Discharge and Electrical Overstress; Description of the Mechanism; Modeling of the Mechanism; Avoiding ESD/EOS Failures; Latch-Up; Description of the Mechanism; How to Detect; How to Avoid; Qualification; Qualification Testing; Virtual Qualification; Screening; Functional Tests; Burn-In Tests; Iddq Tests; Design for Reliability; Design System; Effective Management of Wear-Out Failures; Extrinsic Reliability Mechanisms; Infant Mortality Failure Mechanisms; Circuit Sensitivities; Summary|
|CRC - TAYLOR & FRANCIS||H||ISBN: 0849396247||PGS: 224||List: 146.95 YOUR PRICE: 139.60|
|High Temperature Electronics|
|OVERVIEW OF HIGH TEMPERATURE ELECTRONICS What is High Temperature Electronics? Applications Technical Challenges Summary SELECTION AND USE OF SILICON DEVICES AT HIGH TEMPERATURES Basic Principles of Semiconductor Junctions Silicon Bipolar Transistors Silicon MOSFETs Silicon-on-Insulator Technology Metallization for High Temperature Electronics Availability and Use of Commercial-Grade Silicon Devices in Power Converters at High Temperature Summary WIDE BANDGAP SEMICONDUCTORS GaAs and Other III-V MESFET and Bipolar Devices Heterojunction Bipolar Devices SiC Materials and Devices Metal Contacts on SiC PASSIVE DEVICE SELECTION AND USE AT HIGH TEMPERATURE Resistors Capacitors FIRST-LEVEL PACKAGING CONSIDERATIONS FOR THE USE OF ELECTRONIC HARDWARE AT HIGH TEMPERATURES Wires and Wirebonds Die Attach Lead and Leadframe Materials Plastic Encapsulants Hermetic Case Materials and Lids Lid Seals Lead Seals Summary SECOND- AND THIRD-LEVEL PACKAGING CONSIDERATIONS FOR THE USE OF ELECTRONIC HARDWARE AT HIGH TEMPERATURES Substrates High-Temperature Solder Materials and Conductive Adhesives Wire and Cable Connectors Connector Housings and Box Materials THERMAL MANAGEMENT FOR HIGH TEMPERATURE ELECTRONICS Thermal Management Considerations for Elevated Temperature Operation Passive Techniques for Low (|
|CRC - TAYLOR & FRANCIS||H||ISBN: 0849396239||PGS: 352||List: 157.95 YOUR PRICE: 150.05|
|III-V Nitrides Semiconductors and Ceramics: from Material Growth to Device Applications|
|Gallium Nitride and its alloys with InN and AlN, have recently emerged as important semiconductor materials with application to yellow, green, blue and ultraviolet portions of the spectrum as emitters, detectors and high temperature electronics. LEDs based on wide badgap GaN nitrides exhibit excellent longevity and brightness levels. Combined with red LEDs one can, for the first time, have full colour semiconductor displays.|
The 4 day symposium was presented at the combined 1997 International Conference on Applied Materials/European Materials Research Society Spring meeting (ICAM'97/E-MRS'97) held in Strasbourg (France) from 16-20 June 1997, provided a forum for active nitride researchers covering the most recent developments in all areas of nitride semiconductors. Sessions focused on the aspects of epitaxial and bulk growth of GaN and its alloys, on optical properties and structural and electrical characterisation, quantum phenomena and light-emitting devices such as LEDs and laser diodes.
CONTENTS: Chapter headings and selected papers: Preface. GaN Growth. Efficient and uniform production of III-nitride films by multiwafer MOVPE (M. Deschler et al.). Plasma assisted molecular beam epitaxy growth of GaN (S. Einfeldt et al.). GaN thin films deposited by pulsed laser ablation in nitrogen and ammonia reactive atmospheres (D. Cole et al.). Electronic, Structural Properties and Characterisation. Characterization of AIN buffer layers on (0001)-sapphire substrates (Y.M. Le Vaillant et al.). Zinc-blende GaN: ab initio calculations (J.L.A. Alves et al.). The structure of GaN layers grown on SiC and sapphire by molecular beam epitaxy (P. Ruterana et al.). Transmission electron microscopy characterisation of metalorganic chemical vapour deposition grown GaN layers (B. Pécz et al.). Optical Properties of GaN. Characterization of Ca and C implanted GaN (B. Mensching et al.). Optical and magneto-optical characterization of heteroepitaxial gallium nitride (B.J. Skromme). Optical characterization of MBE-grown GaNs (G. Pozina et al.). Photoluminescence properties of nanocrystalline AIN layers grown by pulse plasma assisted CVD (A. Olszyna et al.). Quantum Phenomena. Nanosecond pump-and-probe study of wurtzite GaN (T. Deguchi et al.). Two-photon spectroscopy in GaN (M. Steube et al.). Quantum beat spectroscopy on excitons in GaN (R. Zimmermann et al.). Nitride Alloys: AlGaN, InGaN and GaAsN. Properties and applications of MBE grown AlGaN (M. Stutzmann et al.). Comparative study of hexagonal and cubic GaN growth by RF-MBE (G. Feuillet et al.). Nitride Devices and Device Modelling. RT-CW operation of InGaN multi-quantum-well structure laser diodes (S. Nakamura). Electrical and optical properties of p-SiC/n-GaN heterostructures (M. Topf et al.).
|Elsevier Science||H||ISBN: 0444205187||PGS: N/A||List: 228.00 YOUR PRICE: 216.60|
|Impurities in Semiconductors: Solubility, Migration and Interactions|
|The Semiconductor Impurity System The Semiconductor Crystal as a Thermodynamic System Thermodynamic Descriptions of Impurity Solubility General Characteristics of Impurity Centers References Impurity Behavior in Semiconductors Hydrogen-Like Impurities Impurities with Partly Filled Electron Shells (d- and f-Impurities) Amphoteric Impurities Isovalent Impurities Volatile Impurities Impurity Solubility in Semiconductors Retrograde Solubility of Impurities Solubility of Hydrogen-Like Impurity Atoms in Germanium and Silicon Hydrogen-Like Impurity Solubility in AIII BV Compounds Solubility of Deep Impurities Solubility of Amphoteric Impurities Microscopic Analysis of Impurity Solubility in Semiconductors Dissolution Enthalpy Calculation by Weisserís Method Dissolution Enthaply in the Pseudo-Alloy Model Solubility of Interstitial f-Atoms in Silicon On Solubility Theory for Semiconductor Compounds Charge Interaction Potential Interaction Defect Interaction in Regular Approximation Interaction Leading to Complexation Defect Ionization in Solids Association of Impurity Atoms Ion Pairs Polytropic Impurities Complexation Thermodynamics in a Semiconductor Compound Impurity-Vacancy Complexes in AIII B V Compounds Impurity-Vacancy Complexes in Silicon Impurity Syneresis Combined Complexation Indirect Ion-Ion Interaction Applied Aspects of Complexation Impurity Kinetics in Semiconductors Impurity Migration Energy Microscopic Theory of Impurity Kinetics Dissociative Diffusion of Impurities Kinetic Effects in Subsurface Layers Diffusion Profiles of Interacting Impurities Impurity Migration in the Formation of Mobile Complexes Diatomic Complexes: Formation and Decomposition Diffusion Model for Mobile Complexes Solution of Diffusion Equations for Various Boundary Conditions Diffusion Theory Versus Experiment References Subject Index.|
|CRC - TAYLOR & FRANCIS||H||ISBN: 0415308313||PGS: 448||List: 209.95 YOUR PRICE: 199.45|
|Long Wave Polar Modes in Semiconductor Heterostructures|
|Long Wave Polar Modes in Semiconductor Heterostructures is concerned with the study of polar optical modes in semiconductor heterostructures from a phenomenological approach and aims to simplify the model of lattice dynamics calculations. The book provides useful tools for performing calculations relevant to anyone who might be interested in practical applications.|
The main focus of Long Wave Polar Modes in Semiconductor Heterostructures is planar heterostructures (quantum wells or barriers, superlattices, double barrier structures etc) but there is also discussion on the growing field of quantum wires and dots. Also to allow anyone reading the book to apply the techniques discussed for planar heterostructures, the scope has been widened to include cylindrical and spherical geometries.
The book is intended as an introductory text which guides the reader through basic questions and expands to cover state-of-the-art professional topics. The book is relevant to experimentalists wanting an instructive presentation of a simple phenomenological model and theoretical tools to work with and also to young theoreticians by providing discussion of basic issues and the basis of advanced theoretical formulations. The book also provides a brief respite on the physics of piezoelectric waves as a coupling to polar optical modes.
CONTENTS: Chapter headings: Preface. Phonons in Bulk Crystals. The Long Wave Limit (bulk). Continuum Approach. Polar Optical Modes in Heterostructures. Surface Green Function Matching. Polar Optical Modes in Layered Structures. Quasi-1D Semiconductor Nanostructures. Quasi-OD Semiconductor Nanostructures.
|Pergamon - ELSEVIER||H||ISBN: 0080426948||PGS: N/A||List: 210.00 YOUR PRICE: 199.50|
|Noise Research in Semiconductor Physics|
|1. Fluctuation Phenomena in Semiconductors and Methods for their Theoretical Analysis 2. Generation-recombination Noise of Photoconductivity and Photoluminescence 3. Carrier Transport Processes and Noise in Semiconductors and Photoconductors 4. Generation-recombination Fluctuations in Structures with Potential Barriers 5. Noise Examination of the Nature of Some Physical Properties in Semiconductor Devices and Materials Impact Ionization and Noise in Semiconductor Diodes|
|CRC - TAYLOR & FRANCIS||H||ISBN: 9056990063||PGS: N/A||List: 269.95 YOUR PRICE: 256.45|
|RUN-TO-RUN CONTROL IN SEMICONDUCTOR MANUFACTURING|
|Introduction What is Run-top-Run Control? Target Audience Purpose of this Book Outline Background Current State-of-the-Art in Semiconductor Manufacturing Process Control History of the Development of Run-to-Run Control Current State o-of-the-Art in Run-to-Run Control Development and Deployment Simple Example: Run-to-Run Control and Comparison to Statistical Process Control Identifying Target Applications for Run-to-Run Control Class of Applications that can Utilize Run-t0-Run Control General Run-to-Run Control Development and Deployment Process Issues in Deploying Run-to-Run Control Developing a Run-to-Run Solution: Run-to-Run Algorithms Introduction Linear Approximation Algorithms Higher Order Approximation Algorithms Neural Network Algorithms Other Approaches Developing a Run-to-Run Solution: Practical Extensions to Algorithms Developing and Deploying Run-to-Run Solutions: Integrating Control Introduction The Generic Cell Controller Other Approaches Integrating into Factory-Wide Manufacturing System Run-to-Run Solution Development, Deployment, and Customization Methodology Introduction Process Identification Choosing a Run-to-Run Control Solution Customizing the Run-to-Run Control Solution to the Process Issues Run-to-Run Control System Deployment Case Studies Chemical-Mechanical Planarization Vapor Phase Epitaxy Advanced Topics Feasibility Analysis of Run-to-Run Control Solutions Stability Analysis of Run-to-Run Control Solutions Combining Process Run-to-Run Control with Inter-Process Control Conclusions Summary of Run-to-Run Development and Deployment Process Deploying Run-to-Run Control in a Timely and Cost Effective Manner Overcoming Barriers to Deployment Future Research and Development Issues References|
|CRC - TAYLOR & FRANCIS||H||ISBN: 0849311780||PGS: 348||List: 157.95 YOUR PRICE: 150.05|
|Semiconductor and Metal Nanocrystals, Synthesis, Electronic, and Optical Properties|
|Semiconductor Nanocrystals: Soft Chemical Synthesis and Manipulation of Semiconductor Nanocrystals; Electronic Structure in Semiconductor Nanocrystals - Optical Experiment;Fine Structure and Polarization Properties of the Band-edge Excitons in Semiconductor Nanocrystals; Intraband Spectroscopy and Dynamics of Semiconductor Colloidal/Quantum Dots; Optical Dynamics in Single Semiconductor Quantum Dots; Electrical Properties of Semiconductor Nanocrystals; Tunnelling and Optical Spectroscopy of Semiconductor Nanocrystal Quantum Dots - Single Particle and Ensemble Properties; Quantum Dots and Quantum Dot Arrays - Synthesis, Optical Properties, Photogenerated Carrier Dynamics and Applications to Photon Conversion; Metal Nanocrystals: Synthesis and Fabrication of Metal Nanocrystal Superlatticies; Optical Spectroscopy of Surface Plasmons In Metal Nanoparticles; Time-Resolved Spectroscopy of Metal Nanoparticles.|
|MARCEL DEKKER - TAYLOR & FRANCIS & FRANC||H||ISBN: 082474716X||PGS: 500||List: 249.95 YOUR PRICE: 237.45|
|Semiconductor Materials: Definition, History, Systematization Introduction to Semiconductor Physics Chemical Bonds in Semiconductor Crystals Electrical Conductivity in Semiconductors Thermoelectric Phenomena in Semiconductors Recombination of Electrons and Holes Photoconductivity and Photo-emf Phenomena at the Interface of n-Type and p-Type Semiconductors Brief Description of the Methods of Evaluation of the Basic Properties of Semiconductors Electrical Conductivity, Hall Effect, Nernst Effect Generation/Recombination Parameters Thermal and Thermoelectric Measurements Elemental Semiconductors Boron Diamond Silicon Germanium Gray Tin Phosphorus Selenium Tellurium Chemical Interaction Between the Elemental Semiconductors: Solid Solutions and Compounds Boron-Carbon Boron-Silicon Boron-Phosphorus Carbon-Silicon Silicon-Germanium Silicon-Tin and Germanium-Tin Binary IV-VI and III-V Semiconductors IVb-IVb Compound-Silicon Carbide IIIb-Vb Compounds Crystal Structure Boron Nitride Boron Phosphide Boron Arsenide Aluminum Nitride Aluminum Phosphide Aluminum Arsenide Aluminum Antimonide Gallium Nitride Gallium Phosphide Gallium Arsenide Gallium Antimonide Indium Nitride Indium Phosphide Indium Arsenide Indium Antimonide Binary II-VI and I-VII Tetrahedral Semiconductors Binary II-VI Compounds Zinc Oxide Zinc Sulfide Zinc Selenide Zinc Telluride Cadmium Sulfide Cadmium Selenide Cadmium Telluride Mercury Sulfide Mercury Selenide Mercury Telluride Ternary Adamantine Semiconductors Ternary Analogs of the III-V Adamantine Semiconductors The II-IV-V2 Compounds (Ternary Pnictides) The I-IV2-V3 Compounds Ternary Analogs of II-VI Adamantine Semiconductors I-III-VI2 Compounds I2-IV-VI3 Compounds I3-V-VI4 Compounds Defect Adamantine Semiconductors IV3-V4 Compounds III2-VI3 Compounds Defect Ternary Compounds III2-IV-VI Compounds Non-Adamantine Semiconductors and Variable-Composition Semiconductor Phases IA-IB Semiconductors Semiconductors in the I-V Binary Systems IA-VB Compounds (IA)3-VB Compounds I-VI Compounds Copper and Silver Oxides Copper and Silver Chalcogenides II2-IV Compounds with Antifluoride Structure IV-VI Galenite Type Compounds V2-VI3 Compounds Binary Compounds of the Group VIIIA Elements Semiconductor Solid Solutions Alloys of Elemental Semiconductors III-V/III-V Semiconductor Alloys II-VI/II-VI Solid Solutions Solid Solutions of II-VI and III-V Compounds Organic Semiconductors Semiconductor Devices p-n Junction and Schottky Barrier p-n Junction p-n Junction Diode Metal-Semiconductor Rectifying Contact. Schottky Barrier Diode Ohmic Contact p-n-Junction and Schottky-Barrier Two-Electrode Devices Varistors and Varactors Zener and Avalanche Diodes Tunnel Diode Photodiode (Solar Cell) Unijunction Transistor Multiterminal (Multibarrier) Devices Bipolar Devices Unipolar Devices Conclusion Index|
|CRC - TAYLOR & FRANCIS||H||ISBN: 0849389127||PGS: 496||List: 229.95 YOUR PRICE: 218.45|
|Semiconductor Quantum Well Intermixing: Material Properties and Optoelectronic Applications|
|1. Theories of Band Structure and Optical Properties of Interdiffused Wuantum Wells K.S. Chan and E.H. Li 2. Interdiffusion Mechanisms in III-V Materials W.P. Gillin 3. Interdiffusion in Lattice-Matched Quantum Wells and Self-Formed Quantum Dots Composed of III-V Semiconductors K. Mukai 4. Interdiffusion in Strained Layer In^OxGa^O1-x As/GaAs Heterostructures F. Iikawa 5. Strain in Interdiffused In^O0.53Ga^O0.47As/InP Quantum Wells J. Micallef 6. Photonic Integration Using Quantum Well Shape Modification Enhanced by Ion Implantation E.S. Koteles 7. Control of Layer Intermixing by Impurities and Defects D. Sun and P. Mei 8. Quantum Wells Intermixing by Ion Implantation and Anodic Oxidation H.H. Tan, S. Yuan, M. Gal and C. Jagadish 9. Impurity-Free Vacancy Disordering of GaAs/AlGaAs Quantum Well Structures: Processing and Devices J.H. Marsh and A.C. Bryce 10. Selective Interdiffusion of GaAs/AlGaAs Quantum Wells Through SiO^O2 Encapsulation - Comparison with the Ion Implantation Approach A. Pépin and C. Vieu 11. Dependence of Dielectric Cap Quantum Well Disordering on the Characteristics of Dielectric Capping Film W.J. Choi 12. Selective Area Disordering of Quantum Wells for Integrated All-Optical Devices P. Li Kam Wa 13. Polarization-Dependent Refractive-Index Change Induced by Superlattice Disordering and Its Applications Y. Suzuki 14. Broadspectrum InGaAs/InP Quantum Well Infrared Photodetector Via Quantum Well Intermixing D. Sengupta, Y.-C. Chang and G. Stillman 15. Diffused Quantum Well Modulators W.C.H. Choy and E.H. Li 16. Analysis and Design of Semiconductor Lasers Using Diffused Quantum Wells Structure S.F. Yu and C.W. Lo Index|
|CRC - TAYLOR & FRANCIS||H||ISBN: 9056996894||PGS: N/A||List: 219.95 YOUR PRICE: 208.95|
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In stock items ship IMMEDIATELY.
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