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| Contents Text: | Introduction. Mass-Producing Technologies for Semi-Insulating GaAs Substrates. Photo-Mombe: A New Epitaxial Growth Technique. Photoassociated Single Molecular Layer Growth. Atomic Layer Epitaxy of III-V Compounds. Passivation of III-V Compound Semiconductors. Understanding and Control of Insulator-Semiconductor Interfaces for Surface Passivation of III-V Compound Semiconductors. Surface-Emitting GaInAsP/InP Diode Lasers Fabricated by Mass Transport. Growth, Characterization, and Device Applications of GaAs on Si. Recent Progress in Quantum Well Lasers in Japan. Quantum Well Heterostructure Lasers. Overview of a Vertical Cavity Surface Emitting Laser. Emphasis on: |
| Title: | Compounts Semiconductors: Growth, Processing and Devices |
| Author: | Holloway, Paul H. |
| ISBN: | 0849301653 |
| Price: | List: 229.95 YOUR PRICE: 218.45 |
| Publisher: | CRC - TAYLOR & FRANCIS |
| Year: | 1989 |
| # of Pages: | 160 |

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