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Contents Text: Introduction. Mass-Producing Technologies for Semi-Insulating GaAs Substrates. Photo-Mombe: A New Epitaxial Growth Technique. Photoassociated Single Molecular Layer Growth. Atomic Layer Epitaxy of III-V Compounds. Passivation of III-V Compound Semiconductors. Understanding and Control of Insulator-Semiconductor Interfaces for Surface Passivation of III-V Compound Semiconductors. Surface-Emitting GaInAsP/InP Diode Lasers Fabricated by Mass Transport. Growth, Characterization, and Device Applications of GaAs on Si. Recent Progress in Quantum Well Lasers in Japan. Quantum Well Heterostructure Lasers. Overview of a Vertical Cavity Surface Emitting Laser. Emphasis on:
Title: Compounts Semiconductors: Growth, Processing and Devices
Author: Holloway, Paul H.
ISBN: 0849301653
Price: List: 229.95     YOUR PRICE: 218.45
Publisher: CRC - TAYLOR & FRANCIS
Year: 1989
# of Pages: 160


 

OPAMP Technical Books
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